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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW13 BUW13A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER CONDITIONS BUW13 Collector-base voltage BUW13A VCEO VEBO IC ICM IB IBM PT Tj Tstg INCH Base current Collector-emitter voltage ANG BUW13 EMIC ES Open emitter Open base Open collector DUC ON VALUE 850 TOR 1000 400 450 9 15 30 6 9 UNIT V V BUW13A Emitter-base voltage V A A A A W ae ae Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 175 150 -65~175 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUW13 VCEO(SUS) Collector-emitter sustaining voltage BUW13A BUW13 VCEsat Collector-emitter saturation voltage BUW13A BUW13 VBEsat Base-emitter saturation voltage BUW13A ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=10A; IB=2A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW13 BUW13A SYMBOL MIN 400 TYP. MAX UNIT V 450 1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 TC=125ae VEB=9V; IC=0 IC=20mA ; VCE=5V 10 1.0 4.0 10 V V mA mA ANG CH Switching times resistive load ton ts tf Turn-on time Storage time Fall time IN EMIC ES For BUW13 IC=10A ;IB1=-IB2=2A For BUW13A IC=8A ;IB1=-IB2=1.6A IC=1.5A ; VCE=5V OND 10 TOR UC 35 35 1.0 4.0 0.8 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13 BUW13A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10mm) 3 |
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